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| AF4978NDA |
N-Channel Enhancement Mode Power MOSFET |
Anachip Corp |
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AF4978NDA Datasheet
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Постоянная ссылка на эту страницу |
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AF4978NDA и другие |
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| Компонент | Описание | Производитель | PDF |
| 001591-5429 |
2.54mm (.100) Pitch C-Grid^ Header, Surface Mount, Dual Row, Vertical, 4 Circuits, Tin (Sn) Plating, without PCB Locator Pegs |
Molex Electronics Ltd. |
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| A-42225-0250 |
2.54mm (.100) Pitch KK^ Header, Breakaway, Vertical, with Polarizing Wall, 5 Circuits, 0.38lm (15l) Gold (Au) Selective Plating, with Backwalls Removed |
Molex Electronics Ltd. |
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| 370AA004M10 |
Water-Tight Cable Sealing Backshell |
Glenair, Inc. |
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| A-42225-0223 |
2.54mm (.100) Pitch KK^ Header, Breakaway, Vertical, with Polarizing Wall, 13 Circuits, Tin (Sn) Plating, with Backwalls Removed |
Molex Electronics Ltd. |
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| 735D866X0100D2 |
Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal CECC 30202 Approved |
Vishay Siliconix |
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