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Поиск Datasheets |
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| 2SC3963_06 |
Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications |
Toshiba Semiconductor |
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2SC3963_06 Datasheet
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Постоянная ссылка на эту страницу |
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2SC3963_06 и другие |
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| Компонент | Описание | Производитель | PDF |
| AME8501AEEVDD20 |
UProcessor Supervisory |
Analog Microelectronics |
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| 0791098616 |
2.00mm (.079) Pitch Milli-Grid Receptacle, Surface Mount, Vertical, Top/Bottom Entry, with Press-fit Plastic Pegs, with Cap, Embossed Tape on Reel |
Molex Electronics Ltd. |
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| AME8501AEEVDD27 |
UProcessor Supervisory |
Analog Microelectronics |
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| 0791098654 |
2.00mm (.079") Pitch Milli-Grid Receptacle, Surface Mount, Vertical, Top/Bottom Entry |
Molex Electronics Ltd. |
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| 2SC3964 |
NPN EPITAXIAL TYPE (SWITCHING, SOLENOID DRIVE APPLICATIONS, TEMPERATURE CONPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE) |
Toshiba Semiconductor |
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