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| F1081 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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F1081 Datasheet
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Постоянная ссылка на эту страницу |
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F1081 и другие |
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| Компонент | Описание | Производитель | PDF |
| DS1135LZ2515 |
3V 3-in-1 High-Speed Silicon Delay Line |
Dallas Semiconductor |
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| FX2C-120S-1.27DSAL |
1.27mm Pitch Multi-function Two Piece Connector |
Hirose Electric |
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| F1077 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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| CE66PD |
0.35um CMOS Technology |
Fujitsu Component Limited. |
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| AD402M328VLB-5 |
Low voltage operation is more suitable to be used on battery backup, portable electronic |
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