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Поиск Datasheets |
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| KM416S1120DT-GF7 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
Samsung semiconductor |
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KM416S1120DT-GF7 Datasheet
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KM416S1120DT-GF7 и другие |
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| Компонент | Описание | Производитель | PDF |
| QST608KN0 |
Capacitive touch sensor device 8 keys with individual key state outputs or I2C interface |
STMicroelectronics |
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| LMUN2134LT1G |
Bias Resistor Transistors |
Leshan Radio Company |
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| KM416RD8AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung semiconductor |
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| LMUN2215LT1 |
BIAS RESISTOR TRANSISTOR, NPN SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK |
Leshan Radio Company |
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| PM105SB-120M |
Shielded, SMT Power Inductors |
List of Unclassifed Manufacturers |
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