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Компонент | Описание | Производитель | PDF | Buy |
BRF91 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi Corporation | | |
MRF9100LR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
MRF9100SR3 | GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs | Motorola, Inc | | |
MRF9120 | RF Power Field Effect Transistors | Motorola, Inc | | |
MRF9120LR3 | RF Power Field Effect Transistors | Motorola, Inc | | |
MRF9120R3 | RF Power Field Effect Transistors | Motorola, Inc | | |
IRF9130 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
IRF9130 | P-CHANNEL POWER MOSFET | Seme LAB | | |
IRF9130 | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET | Intersil Corporation | | |
IRF9130 | PCHANNEL POWER MOSFET | Seme LAB | | |
IRF9130 | TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) | International Rectifier | | |
MRF9130L | RF Power Field Effect Transistors | Motorola, Inc | | |
MRF9130LR3 | RF Power Field Effect Transistors | Motorola, Inc | | |
MRF9130LSR3 | RF Power Field Effect Transistors | Motorola, Inc | | |
IRF9130SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | Seme LAB | | |
IRF9130SMD05 | P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | Seme LAB | | |
IRF9130_03 | PCHANNEL POWER MOSFET | Seme LAB | | |
IRF9131 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
IRF9132 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
IRF9133 | P-CHANNEL POWER MOSFETS | Samsung semiconductor | | |
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