Результаты поиска для 180101

LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Infineon Technologies AG

High Normal Force (HNF) Female Terminal, For 6.3 x 0.8mm (."248x.031") Tabs, Tin Plated Brass, AWG 18-20

Molex Electronics Ltd.

High Power RF LDMOS Field Effect Transistor 10 W, 1.0 2.0 GHz

Infineon Technologies AG

Zinc Oxide

Ceramate Technical

LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz

Infineon Technologies AG