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Компонент | Описание | Производитель | PDF | Buy |
KM681000 | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
BTW681000 | HIGH SURGE CAPABILITY | STMicroelectronics | | |
9681681000 | USB1.1/ IEEE1284 Compliant | AAEON Technology | | |
B57164K0681000 | NTC thermistors for temperature measurement | EPCOS | | |
B82498F3681000 | SMT Inductors, SIMID Series SIMID 0805-F | EPCOS | | |
1526810000 | BLZ 5.08/6 SN SW | Weidmuller | | |
1736810000 | Cable glands | Weidmuller | | |
0368100000 | SAK-series | Weidmuller | | |
0416810001 | 3.96mm (.156") Pitch KK^ Header, Breakaway, Vertical, Polarizing Wall, 2 Circuits | Molex Electronics Ltd. | | |
0746810001 | 2.00mm (.079") Pitch 8-Row VHDM-HSD Board-to-Board Daughtercard ReceptacleRight Angle, Signal Module, 60 Circuits | Molex Electronics Ltd. | | |
0416810003 | 3.96mm (.156") Pitch KK^ Header, Breakaway, Vertical, Polarizing Wall, 4 Circuits | Molex Electronics Ltd. | | |
FP2001681000A | Hermetic Flat-Pak Resistor Networks | Vishay Siliconix | | |
KM681000B | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
FP2001681000B | Hermetic Flat-Pak Resistor Networks | Vishay Siliconix | | |
KM681000BL | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
KM681000BL-L | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
KM681000BLE | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
KM681000BLE-L | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
KM681000BLG-5 | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
KM681000BLG-5L | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
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