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| BC301 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics | | |
| *BC30*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
OBC30 | HCMOS/TTL Low Power Oscillator | List of Unclassifed Manufacturers | | |
MBC30 | Micro Power Resistors | List of Unclassifed Manufacturers | | |
OBC30 | HCMOS/TTL Low Power Oscillator | Caliber Electronics Inc. | | |
IRFBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) | International Rectifier | | |
IRFBC30 | Power MOSFET | Vishay Siliconix | | |
IRGBC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) | International Rectifier | | |
IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | STMicroelectronics | | |
IRFIBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) | International Rectifier | | |
IRG4BC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) | International Rectifier | | |
IRG4BC30 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) | International Rectifier | | |
IRG4BC30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | International Rectifier | | |
SIHFBC30 | Power MOSFET | Vishay Siliconix | | |
TBC30-12EGWA | 76.2mm (3.0 INCH) 5 X 7 MULTICORLOR DOT MATRIX DISPLAYS | Kingbright Corporation | | |
SIHFBC30-E3 | Power MOSFET | Vishay Siliconix | | |
BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics | | |
BC300 | Small Signal Transistors | Central Semiconductor Corp | | |
BC300 | Bipolar NPN Device in a Hermetically sealed TO39 | Seme LAB | | |
BC300-4 | Bipolar NPN Device in a Hermetically sealed TO39 | Seme LAB | | |
BC300-6 | Bipolar NPN Device in a Hermetically sealed TO39 | Seme LAB | | |
TBC3001B | 1BARRIER TERMINAL STRIPS | Adam Technologies, Inc. | | |
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