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Компонент | Описание | Производитель | PDF | Buy |
H02N60 | N-Channel Power Field Effect Transistor | Hi-Sincerity Mocroelectronics | | |
M02N60 | N Channel MOSFET | Stanson Technology | | |
GE02N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM CORPORATION | | |
CJP02N60 | Power Filed Effect Transistor | Jiangsu Changjiang Electronics Technology Co., Ltd | | |
CMT02N60 | POWER FIELD EFFECT TRANSISTOR | List of Unclassifed Manufacturers | | |
CMT02N60 | POWER FIELD EFFECT TRANSISTOR | Champion Microelectronic Corp. | | |
CMT02N60 | POWER FIELD EFFECT TRANSISTOR | Champion Microelectronic Corp. | | |
SPD02N60 | SIPMO Power Transistor | Siemens Semiconductor Group | | |
SPU02N60 | Cool MOS Power Transistor | Infineon Technologies AG | | |
SGB02N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | | |
SGD02N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | | |
SGP02N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | | |
SKB02N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
SKP02N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
SPU02N60 | SIPMO Power Transistor | Siemens Semiconductor Group | | |
ACE302N600ABM+H | Low Voltage Detector with Built-in Delay Circuit | ACE Technology Co., LTD. | | |
ACE302N600ABM+H | Low Voltage Detector with Built-in Delay Circuit | ACE Technology Co., LTD. | | |
ACE302N600BBM+H | Low Voltage Detector with Built-in Delay Circuit | ACE Technology Co., LTD. | | |
ACE302N600BBM+H | Low Voltage Detector with Built-in Delay Circuit | ACE Technology Co., LTD. | | |
ACE302N600CBM+H | Low Voltage Detector with Built-in Delay Circuit | ACE Technology Co., LTD. | | |
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