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| Результаты поиска для 10N40E | |
| Компонент | Описание | Производитель | PDF | Buy |
| MTB10N40E | TMOS POWER FET 10 AMPERES | Motorola, Inc |  |  |
| MTP10N40E | TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS | Motorola, Inc | | |
| MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | Motorola, Inc | | |
| PHP10N40E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
| PHX10N40E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors | | |
| PHB10N40E | 400 V, power MOS transistor avalanche energy rated | NXP Semiconductors | | |
| PHW10N40E | 400 V, power MOS transistor avalanche energy rated | NXP Semiconductors | | |
| HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil Corporation | | |
| HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil Corporation | | |
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