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| Результаты поиска для 1612D | |
| Компонент | Описание | Производитель | PDF | Buy |
| PSB-1612D | SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS | Premier Magnetics, Inc. |  |  |
| K4E171612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E641612D | CMOS DRAM | Samsung semiconductor | | |
| K4F171612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4F641612D | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE | Samsung semiconductor | | |
| K4F661612D | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE | Samsung semiconductor | | |
| K4E661612D | CMOS DRAM | Samsung semiconductor | | |
| K4F151612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| MDLS161612D-09 | SPECIFICATION OF LCD MODULE TYPE | Varitronix international limited | | |
| VL-FS-MDLS161612D-09 | SPECIFICATION OF LCD MODULE TYPE | Varitronix international limited | | |
| K4E171612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | | |
| K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F171612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | | |
| K4F151612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| MDLS161612D-LV-B-LED04G | SPECIFICATION OF LCD MODULE TYPE | Varitronix international limited | | |
| K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | | |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | | |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
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