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| Результаты поиска для 2N120 | |
| Компонент | Описание | Производитель | PDF | Buy |
| MGW12N120 | Insulated Gate Bipolar Transistor | Motorola, Inc |  |  |
| SGB02N120 | Fast IGBT in NPT-technology Lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SGB02N120 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | | |
| SGD02N120 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | | |
| SGD02N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SGI02N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SGP02N120 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | | |
| SGP02N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SGW02N120 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SGW02N120 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SKB02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SKB02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SKP02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| MGW12N120 | Insulated Gate Bipolar Transistor | ON Semiconductor | | |
| IXFH12N120 | High Voltage HiPerFET Power MOSFET | IXYS Corporation | | |
| IXFN22N120 | HiPerFET Power MOSFETs | IXYS Corporation | | |
| IXFN32N120 | HiPerFET Power MOSFETs | IXYS Corporation | | |
| IXTH12N120 | Power MOSFET, Avalanche Rated High Voltage | IXYS Corporation | | |
| FM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild Semiconductor | | |
| NM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | National Semiconductor | | |
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