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| 2N5571 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
2N5571 | SILICON BIDIRECTIOANAL TRIODE THYRISTORS | Motorola, Inc | | |
| *2N557*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
2N5570 | BIDIRECTIONAL TRIODE THYRISTORS | Motorola, Inc | | |
2N5570 | TRIACS BIDIRECTIONAL TRIODE THYRISTORS | New Jersey Semi-Conductor Products, Inc. | | |
2N5571 | SILICON BIDIRECTIOANAL TRIODE THYRISTORS | Motorola, Inc | | |
2N5571 | TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS | New Jersey Semi-Conductor Products, Inc. | | |
2N5572 | SILICON BIDIRECTIOANAL TRIODE THYRISTORS | Motorola, Inc | | |
2N5572 | TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS | New Jersey Semi-Conductor Products, Inc. | | |
2N5573 | SILICON BIDIRECTIOANAL TRIODE THYRISTORS | Motorola, Inc | | |
2N5573 | TRIAC, V(DRM) = 200V TO 299.9V | New Jersey Semi-Conductor Products, Inc. | | |
2N5573 | TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS | New Jersey Semi-Conductor Products, Inc. | | |
2N5574 | SILICON BIDIRECTIOANAL TRIODE THYRISTORS | Motorola, Inc | | |
2N5574 | TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS | New Jersey Semi-Conductor Products, Inc. | | |
2N5574 | 5-A SILICON TRIAC | New Jersey Semi-Conductor Products, Inc. | | |
2N5575 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Seme LAB | | |
2N5575 | SI NPN POWER BJT, I(C) | New Jersey Semi-Conductor Products, Inc. | | |
SF_2N5575 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | Seme LAB | | |
2N5578 | SI NPN POWER BJT, I(C) | New Jersey Semi-Conductor Products, Inc. | | |
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