| Компонент | Описание | Производитель | PDF | Buy |
| 2SA503 | SILICON PNP EPITAXIAL | New Jersey Semi-Conductor Products, Inc. |  |  |
| 2SA504 | SILICON PNP EPITAXIAL | New Jersey Semi-Conductor Products, Inc. | | |
| 2SA505 | SILICON PNP EPITAXIAL TYPE(PCT PROCESS) | Toshiba Semiconductor | | |
| 2SA510 | SILICON PNP EPITAXIAL TYPE | Toshiba Semiconductor | | |
| 2SA512 | SILICON PNP EPITAXIAL TYPE | Toshiba Semiconductor | | |
| 2SA52 | GERMANIUM PNP ALLOY JUNCTION TRANSISTOR | List of Unclassifed Manufacturers | | |
| 2SA539 | LOW FREQUENCY AMPLIFIER | Usha India Ltd. | | |
| 2SA539O | LOW FREQUENCY AMPLIFIER | Usha India Ltd. | | |
| 2SA539R | LOW FREQUENCY AMPLIFIER | Usha India Ltd. | | |
| 2SA539Y | LOW FREQUENCY AMPLIFIER | Usha India Ltd. | | |
| 2SA542 | Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. | Usha India Ltd. | | |
| IDT7132SA55C | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | Integrated Device Technology | | |
| IDT7142SA55C | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | Integrated Device Technology | | |
| IDT7142SA55C | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | Integrated Device Technology | | |
| IDT7132SA55C | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | Integrated Device Technology | | |
| IDT7132SA55CB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | Integrated Device Technology | | |
| IDT7132SA55CB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | Integrated Device Technology | | |
| IDT7142SA55CB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM | Integrated Device Technology | | |
| IDT7142SA55CB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | Integrated Device Technology | | |
| IDT7132SA55CI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | Integrated Device Technology | | |
