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| 2SK2857 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
2SK2857 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | NEC |  |  |
| *2SK285*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 2SK2850 | N-Channel Enhancement Mode Power MOSFET | Fuji Electric | | |
| 2SK2850-01 | N-Channel Enhancement Mode Power MOSFET | Fuji Electric | | |
| 2SK2851 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | | |
| 2SK2854 | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION | Toshiba Semiconductor | | |
| 2SK2854 | N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | | |
| 2SK2854_07 | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION | Toshiba Semiconductor | | |
| 2SK2855 | N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION) | Toshiba Semiconductor | | |
| 2SK2855 | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION | Toshiba Semiconductor | | |
| 2SK2855_07 | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION | Toshiba Semiconductor | | |
| 2SK2856 | N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | | |
| 2SK2857 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | NEC | | |
| 2SK2857 | MOS Field Effect Transistor | Guangdong Kexin Industrial Co.,Ltd | | |
| 2SK2858 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | NEC | | |
| 2SK2859 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device | | |
| 2SK2859 | N-Channel Silicon MOSFET | Guangdong Kexin Industrial Co.,Ltd | | |
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