Компонент | Описание | Производитель | PDF | Buy |
2N3110 | GENERAL PURPOSE AMPLIFIERS AND SWITCHES | Comset Semiconductor | | |
2N3110 | NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | Micro Electronics | | |
2N3110 | Small Signal Transistors | Central Semiconductor Corp | | |
2N3110 | Bipolar NPN Device in a Hermetically sealed TO39 | Seme LAB | | |
2N3114 | Small Signal Transistors | Central Semiconductor Corp | | |
2N3114 | NPN SILICON TRANSISTOR | Central Semiconductor Corp | | |
2N3114CSM | Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications | Seme LAB | | |
2N3114CSM | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | Seme LAB | | |
2N3114CSM_09 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | Seme LAB | | |
2N3115 | Small Signal Transistors | Central Semiconductor Corp | | |
2N3116 | Small Signal Transistors | Central Semiconductor Corp | | |
2N3117 | Small Signal Transistors | Central Semiconductor Corp | | |
2N3117 | SI NPN LO-PWR BJT MANUFACTURER | New Jersey Semi-Conductor Products, Inc. | | |
2N3119 | Small Signal Transistors | Central Semiconductor Corp | | |
2N3119 | SI NPN POWER HF BJI MANUFACTURER | New Jersey Semi-Conductor Products, Inc. | | |
R1172N311A | SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO | RICOH electronics devices division | | |
R3112N311A | MARK INFORMATION ME-R3112N-0310 R3112N SERIES MARK SPECIFICATION | RICOH electronics devices division | | |
R3112N311A | LOW VOLTAGE DETECTOR WITH OUTPUT DELAY | RICOH electronics devices division | | |
R1162N311B | 3-MODE 150mA LDO REGULATOR | RICOH electronics devices division | | |
R1172N311B | SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO | RICOH electronics devices division | | |