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Компонент | Описание | Производитель | PDF | Buy |
82N39 | VOLTAGE DETECTORS | Unisonic Technologies | | |
S72N39 | Standard Voltage Detector | AUK corp | | |
82N39-AB3-G-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-AB3-I-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-AB3-I-K | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-AB3-O-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-AE3-G-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-AE3-I-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-AE3-O-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-T92-G-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-T92-I-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
82N39-T92-O-B | VOLTAGE DETECTORS | Unisonic Technologies | | |
V2N390-B-10 | HIGH VOLTAGE CHIP CAPACITORS | Superworld Electronics | | |
2N3902 | HIGH VOLTAGE NPN SILICON TRANSISTORS | Boca Semiconductor Corporation | | |
2N3902 | Bipolar NPN Device in a Hermetically sealed TO3 | Seme LAB | | |
2N3902 | SI NPN POWER BJT, I(C) = 2.5A TO 4.9A | New Jersey Semi-Conductor Products, Inc. | | |
2N3903 | General Purpose Transistors(NPN Silicon) | ON Semiconductor | | |
2N3903 | npn epitaxial silicon transistor | Samsung semiconductor | | |
2N3903 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | Micro Electronics | | |
2N3903 | Si-Epitaxial PlanarTransistors | Diotec Semiconductor | | |
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