| Компонент | Описание | Производитель | PDF | Buy |
| SGB30N60 | Fast IGBT in NPT-technology | Infineon Technologies AG |  |  |
| SGB30N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SGP30N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SGP30N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SGW30N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SGW30N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SKW30N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SGP30N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| MGW30N60 | Insulated Gate Bipolar Transistor | Motorola, Inc | | |
| IXGM30N60 | Low VCE(sat) IGBT, High speed IGBT | IXYS Corporation | | |
| IXSH30N60 | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
| IXSM30N60 | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
| RDX030N60 | 10V Drive Nch MOS FET | Rohm | | |
| IXGH30N60 | Low VCE(sat) IGBT, High speed IGBT | IXYS Corporation | | |
| IXGH30N60A | Low VCE(sat) IGBT, High speed IGBT | IXYS Corporation | | |
| IXGM30N60A | Low VCE(sat) IGBT, High speed IGBT | IXYS Corporation | | |
| IXSH30N60A | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
| IXSM30N60A | Low VCE(sat) IGBT, High Speed IGBT | IXYS Corporation | | |
| HGTG30N60A4 | 600V, SMPS Series N-Channel IGBT | Fairchild Semiconductor | | |
| HGTG30N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil Corporation | | |
