Компонент | Описание | Производитель | PDF | Buy |
NEM-41C4 | Network Expansion Module | JDS Uniphase Corporation | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
EB41C40 | Edgeboard Connectors, Dual Readout, 0.100" [2.54mm] C-C, Standard and Right Angle Terminals | Vishay Siliconix | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000D | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DJ-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DJ-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DJ-7 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DLJ-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DLJ-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DLJ-7 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DLT-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DLT-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DLT-7 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DT-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DT-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
KM41C4000DT-7 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IC41C4100 | 1Mx4 bit Dynamic RAM with EDO Page Mode | Integrated Circuit Solution Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IS41C4100 | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | Integrated Silicon Solution, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IC41C4100-35J | 1Mx4 bit Dynamic RAM with EDO Page Mode | Integrated Circuit Solution Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IS41C4100-35J | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | Integrated Silicon Solution, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IC41C4100-35JI | 1Mx4 bit Dynamic RAM with EDO Page Mode | Integrated Circuit Solution Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |