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| Результаты поиска для 4CC5N9M | |
| Компонент | Описание | Производитель | PDF | Buy |
| I202-4CC5-27.000 | Leaded Oscillator, VCXO, TTL / HC-MOS Metal Package, Full Size DIP and Half DIP | ILSI America LLC |  |  |
| I203-4CC5-27.000 | Leaded Oscillator, VCXO, TTL / HC-MOS Metal Package, Full Size DIP and Half DIP | ILSI America LLC | | |
| I212-4CC5-56.000 | Leaded Oscillator, VCXO, TTL / HC-MOS Metal Package, Full Size DIP and Half DIP | ILSI America LLC | | |
| I213-4CC5-56.000 | Leaded Oscillator, VCXO, TTL / HC-MOS Metal Package, Full Size DIP and Half DIP | ILSI America LLC | | |
| IRG4CC50WB | IGBT Die in Wafer Form 600 V Size 5 WARP Speed | Hittite Microwave Corporation | | |
| I605-4CC5H-20.000 | 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS | ILSI America LLC | | |
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