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| Результаты поиска для 54DT-26SC | |
| Компонент | Описание | Производитель | PDF | Buy |
| KM416C254DT-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period | Samsung semiconductor |  |  |
| KM416V254DT-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung semiconductor | | |
| KM416C254DT-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period | Samsung semiconductor | | |
| KM416V254DT-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung semiconductor | | |
| KM416C254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period | Samsung semiconductor | | |
| KM416V254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung semiconductor | | |
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