Компонент | Описание | Производитель | PDF | Buy |
TDA3663AT | Very low dropout voltage/quiescent current 3.3 V voltage regulator | NXP Semiconductors | | |
TDA3663AT | Very low dropout voltage/quiescent current 3.3 V voltage regulator | NXP Semiconductors | | |
AT49BV163AT | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory | ATMEL Corporation | | |
SS100M063AT | 85 jC Sub-Miniature Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | | |
SS101M063AT | 85 jC Sub-Miniature Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | | |
SS102M063AT | 85 jC Sub-Miniature Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | | |
SS1ROM063AT | 85 jC Sub-Miniature Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | | |
IDT54FCT163AT | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS | Integrated Device Technology | | |
IDT74FCT163AT | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS | Integrated Device Technology | | |
IDT54FCT163AT | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTER | Integrated Device Technology | | |
IDT74FCT163AT | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTER | Integrated Device Technology | | |
GM71C18163AT-6 | 1,048,576 words x 16 bit DRAM, 60ns | LG Semicon Co.,Ltd. | | |
GM71C18163AT-7 | 1,048,576 words x 16 bit DRAM, 70ns | LG Semicon Co.,Ltd. | | |
AT49BV163AT-70TI | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory | ATMEL Corporation | | |
GM71C18163AT-8 | 1,048,576 words x 16 bit DRAM, 80ns | LG Semicon Co.,Ltd. | | |
IDT54FCT163ATD | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS | Integrated Device Technology | | |
IDT74FCT163ATD | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS | Integrated Device Technology | | |
IDT54FCT163ATD | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTER | Integrated Device Technology | | |
IDT74FCT163ATD | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTER | Integrated Device Technology | | |
IDT54FCT163ATDB | FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS | Integrated Device Technology | | |