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Компонент | Описание | Производитель | PDF | Buy |
SFF6N100 | 4.5 AMP 1000 VOLTS 2 ohm N-Channel Power MOSFET | Solid States Devices, Inc | | |
STH6N100 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics | | |
MTW6N100 | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM | Motorola, Inc | | |
IXFH6N100 | HIPERFET Power MOSFTETs | IXYS Corporation | | |
IXFH6N100 | HiPerFET Power MOSFETs | IXYS Corporation | | |
IXFM6N100 | HIPERFET Power MOSFTETs | IXYS Corporation | | |
IXFM6N100 | HiPerFET Power MOSFETs | IXYS Corporation | | |
IXFE36N100 | HiPerFET-TM Power MOSFET | IXYS Corporation | | |
IXFN16N100 | HIPERFET Power MOSFTETs | IXYS Corporation | | |
IXFN36N100 | HiPerFET Power MOSFETs Single Die MOSFET | IXYS Corporation | | |
NM27C256N100 | 262,144-Bit (32K x 8) High Performance CMOS EPROM | Fairchild Semiconductor | | |
XF121206-2R6N100 | INDUCTORS | XFMRS Inc. | | |
PRN10016N1000J | Isolated Resistor Termination Network | California Micro Devices Corp | | |
PRN11016N1000J | Isolated Resistor Termination Network | California Micro Devices Corp | | |
PRN10016N1000JR | Isolated Resistor Termination Network | California Micro Devices Corp | | |
PRN11016N1000JR | Isolated Resistor Termination Network | California Micro Devices Corp | | |
PRN10016N1000JT | Isolated Resistor Termination Network | California Micro Devices Corp | | |
PRN11016N1000JT | Isolated Resistor Termination Network | California Micro Devices Corp | | |
CTRJG26D6N1001A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
CTRJG26S6N1001A | Integrated RJ45 Magnetic Connectors | Central Technologies | | |
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