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Компонент | Описание | Производитель | PDF | Buy |
DG0R7V60 | Rectifier Diode | Shindengen Electric Mfg.Co.Ltd | | |
MR27V6402D | 4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit One Time PROM | OKI electronic componets | | |
MR27V6402G | 4M-Word x 16-Bit or 8M-Word x 8-Bit OTP | OKI electronic componets | | |
HY57V641620ELTP-5 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ELTP-6 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ELTP-7 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ELTP-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ESTP-5 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ESTP-6 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ESTP-7 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ESTP-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ET | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ET-5 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ET-6 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ET-7 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620ET-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | Hynix Semiconductor | | |
HY57V641620HG | 4 Banks x 1M x 16Bit Synchronous DRAM | Hynix Semiconductor | | |
HY57V641620HG-I | 4 Banks x 1M x 16Bit Synchronous DRAM | Hynix Semiconductor | | |
HY57V641620HGLT-5 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz | Hynix Semiconductor | | |
HY57V641620HGLT-55 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz | Hynix Semiconductor | | |
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