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Компонент | Описание | Производитель | PDF | Buy |
KRC832E | EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) | KEC(Korea Electronics) | | |
KV1832E | VARIABLE CAPACITANCE DIODE | TOKO, Inc | | |
CBT6832E | 16-bit controlled enable rate 1-of-2 multiplexer/demultiplexer with precharged outputs and Schottky undershoot protection for live insertion | NXP Semiconductors | | |
LC75832E | General-Purpose LCD Display Driver | Sanyo Semicon Device | | |
K4S640832E | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S560832E-NC75 | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor | | |
K4S560832E-NCL75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung semiconductor | | |
K4S560832E-NL75 | 256Mb E-die SDRAM Specification 54pin sTSOP-II | Samsung semiconductor | | |
K4S640832E-TC1H | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S640832E-TC1L | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S280832E-TC75 | 128Mb E-die SDRAM Specification | Samsung semiconductor | | |
K4S640832E-TC75 | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S560832E-TC75 | 256Mb E-die SDRAM Specification | Samsung semiconductor | | |
K4S280832E-TCL75 | 128Mb SDRAM, 3.3V, LVTTL, 133MHz | Samsung semiconductor | | |
K4S640832E-TL1H | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S640832E-TL1L | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S560832E-TL75 | 256Mb E-die SDRAM Specification | Samsung semiconductor | | |
K4S640832E-TL75 | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | | |
K4S280832E-TL75 | 128Mb E-die SDRAM Specification | Samsung semiconductor | | |
K4S560832E-UC75 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | | |
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