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Компонент | Описание | Производитель | PDF | Buy |
CMX869B | The Product Data Amendment series of documents | CML Microcircuits | | |
ICSSSTUA32S869B | 14-Bit Configurable Registered Buffer for DDR2 | Integrated Circuit Systems | | |
K4R441869B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | | |
K4R441869B-MCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung semiconductor | | |
K4R441869B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung semiconductor | | |
K4R441869B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | | |
K4R441869B-NCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung semiconductor | | |
K4R441869B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung semiconductor | | |
IDT74SSTU32D869BKG | 14-BIT 1:2 REGISTERED BUFFER WITH PARITY | Integrated Device Technology | | |
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