Компонент | Описание | Производитель | PDF | Buy |
EP1AGX | Section I. Arria GX Device Data Sheet | Altera Corporation | | |
ARRIAGX | The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology | Altera Corporation | | |
ALP121AGX | Low-Temperature Polysilicon 1.5-inch TFT LCD Module | Sanyo Semicon Device | | |
PBH2UEENAGX | E-SWITCH PBH2UEENAGX | E-SWITCH | | |
PBH2UOANAGX | PBH2UOANAGX | E-SWITCH | | |
PBH4UOANAGX | E-SWITCH PBH4UOANAGX | E-SWITCH | | |
1XPBH2UEENAGX | CONTACT RESISTANCE: 100m (INITIAL) | E-SWITCH | | |
MAGX-000035-030000 | GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz | M/A-COM Technology Solutions, Inc. | | |
MAGX-000035-SB1PPR | GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz | M/A-COM Technology Solutions, Inc. | | |
MAGX-000912-125L00 | GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-000912-250L00 | GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-000912-SB0PPR | GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-000912-SB1PPR | GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-001214-125L00 | GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-001214-250L00 | GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-001214-SB0PPR | GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-001214-SB1PPR | GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300ls Pulse, 10% Duty | M/A-COM Technology Solutions, Inc. | | |
MAGX-001220-100L00 | GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz | M/A-COM Technology Solutions, Inc. | | |
MAGX-001220-1SB1PPR | GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz | M/A-COM Technology Solutions, Inc. | | |
MAGX-002731-030L00 | GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle | M/A-COM Technology Solutions, Inc. | | |