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Компонент | Описание | Производитель | PDF | Buy |
GAT-7 | Miniature Plastic Fixed Attenuators | Mini-Circuits | | |
BAT54AT-7 | SURFACE MOUNT SCHOTTKY BARRIER DIODE | Diodes Incorporated | | |
BC857AT-7 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Diodes Incorporated | | |
GS72116AT-7 | 128K x 16 2Mb Asynchronous SRAM | GSI Technology | | |
HM514400AT-7 | 1,048,576-WORD x 4-BIT DYNAMIC RAM | Hitachi Semiconductor | | |
GS880F18AT-7 | 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs | GSI Technology | | |
GS880F32AT-7 | 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs | GSI Technology | | |
GS880F36AT-7 | 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs | GSI Technology | | |
MMBT2907AT-7 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Diodes Incorporated | | |
MMBT2222AT-7 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Diodes Incorporated | | |
SDMP0340LAT-7 | SURFACE MOUNT SCHOTTKY BARRIER DIODE | Diodes Incorporated | | |
PEEL22CV10AT-7 | PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | | |
PEEL22CV10AT-7 | CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | | |
PEEL22CV10AT-7 | CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | | |
GM71C18163AT-7 | 1,048,576 words x 16 bit DRAM, 70ns | LG Semicon Co.,Ltd. | | |
KM416V1004AT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung semiconductor | | |
HY57V281620AT-7 | 4 Banks x 2M x 16bits Synchronous DRAM | Hynix Semiconductor | | |
HYB25D128160AT-7 | 128 Mbit Double Data Rate SDRAM | Infineon Technologies AG | | |
HYB25D128400AT-7 | 128 Mbit Double Data Rate SDRAM | Infineon Technologies AG | | |
HYB25D128800AT-7 | 128 Mbit Double Data Rate SDRAM | Infineon Technologies AG | | |
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