Компонент | Описание | Производитель | PDF | Buy |
BCR129 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens Semiconductor Group | | |
Компонент | Описание | Производитель | PDF | Buy |
BCR129 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens Semiconductor Group | | |
BCR129 | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR129 | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR129F | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR129S | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | Siemens Semiconductor Group | | |
BCR129S | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR129S | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR129W | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR129W | NPN Silicon Digital Transistor | Infineon Technologies AG | | |
BCR12CM | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
BCR12CM-12 | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
BCR12CM-12L | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
BCR12CM-12LA | Triac Medium Power Use | Renesas Technology Corp | | |
BCR12CM-12LA-A8 | Triac Medium Power Use | Renesas Technology Corp | | |
BCR12CM-12LB | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
BCR12CM-12LB-A8 | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
BCR12CM-8 | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
BCR12CM-8L | Triac 12 Amperes/400-600 Volts | Powerex Power Semiconductors | | |
BCR12CM12L | Standard Triac | Apollo Electron Co., Ltd. | | |
BCR12CS | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors | | |