| Компонент | Описание | Производитель | PDF | Buy |
BCR22 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens Semiconductor Group |  |  |
| Компонент | Описание | Производитель | PDF | Buy |
| S29GL032M10BBCR20 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 lm MirrorBit Process Technology | SPANSION | | |
| S29GL032M10FBCR20 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 lm MirrorBit Process Technology | SPANSION | | |
| S29GL032M10TBCR20 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 lm MirrorBit Process Technology | SPANSION | | |
| BCR20A | MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| BCR20AM | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| BCR20AM | Triac 20 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
| BCR20AM-12 | Triac 20 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
| BCR20AM-12L | Triac 20 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
| BCR20AM-12LA | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR20AM-12LA-A8 | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR20AM-12LB | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
| BCR20AM-12LB-A8 | Triac Medium Power Use (The product guaranteed maximum junction temperature of 150`C) | Renesas Technology Corp | | |
| BCR20AM-8 | Triac 20 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
| BCR20AM-8L | Triac 20 Ampere/400-600 Volts | Powerex Power Semiconductors | | |
| BCR20B | MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| BCR20C | MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| BCR20E | MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Semiconductor | | |
| BCR20KM | MITSUBISHI SEMICONDUCTOR TRIAC | Renesas Technology Corp | | |
| BCR20KM-12L | Triac Medium Power Use | Renesas Technology Corp | | |
| BCR20KM-12LA | Triac Medium Power Use | Renesas Technology Corp | | |
