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Компонент | Описание | Производитель | PDF | Buy |
70RCK8 | RACKS 8 Channel | Grayhill, Inc | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
LNG898CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
LNG897CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
LNW876CK8 | 3.2 mm InGaAIP | Panasonic Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
LNW898CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
LNW897CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271669B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271669B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R441869B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R441869B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271669AN-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271669AM-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R271669A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
K4R441869A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
MR16R1624AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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