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Компонент | Описание | Производитель | PDF | Buy |
GM71C17400CLT-7 | 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | | |
GM71C17403CLT-7 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power | Hynix Semiconductor | | |
GM71C17800CLT-7 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power | Hynix Semiconductor | | |
GM71V17403CLT-7 | CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power | Hynix Semiconductor | | |
HY57V643220CLT-7 | 4 Banks x 512K x 32Bit Synchronous DRAM | Hynix Semiconductor | | |
HY57V561620CLT-7 | 4 Banks x 4M x 16Bit Synchronous DRAM | Hynix Semiconductor | | |
GM71CS17400CLT-7 | 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power | Hynix Semiconductor | | |
GM71CS17403CLT-7 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power | Hynix Semiconductor | | |
GM71CS17800CLT-7 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power | Hynix Semiconductor | | |
GM71VS17403CLT-7 | CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power | Hynix Semiconductor | | |
GM71CS18163CLT-7 | 1,048,576 words x 16 bit CMOS DRAM, 70ns, low power | Hynix Semiconductor | | |
HY57V281620HCLT-7 | 4 Banks x 2M x 16bits Synchronous DRAM | Hynix Semiconductor | | |
GM71C4400CLT-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM | LG Semicon Co.,Ltd. | | |
GM71S4400CLT-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM | LG Semicon Co.,Ltd. | | |
HY57V281620HCLT-7I | 4 Banks x 2M x 16bits Synchronous DRAM | Hynix Semiconductor | | |
GM72V66841CLT-7J | 2097152 word x 8 bit x 4 bank synchronous dynamic RAM | LG Semicon Co.,Ltd. | | |
GM72V66841CLT-7K | 2097152 word x 8 bit x 4 bank synchronous dynamic RAM | LG Semicon Co.,Ltd. | | |
KM681000CLT-7L | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
KM684000CLT-7L | 512Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
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