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Компонент | Описание | Производитель | PDF | Buy |
CM150TU-12F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM150TU-12F | Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM150TU-12F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM150TU-12F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM150TU-12F_12 | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM150TU-12H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM150TU-12H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM150TU-12H | Six IGBTMOD 150 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM150TU-12H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM150TU-12H_12 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
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