| Компонент | Описание | Производитель | PDF | Buy |
| CM200TU-12F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor |  |  |
| CM200TU-12F | Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts | Powerex Power Semiconductors | | |
| CM200TU-12F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM200TU-12F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM200TU-12H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM200TU-12H | Six IGBTMOD 200 Amperes/600 Volts | Powerex Power Semiconductors | | |
| CM200TU-12H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM200TU-12H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
