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| Результаты поиска для CM200TU-12 | |
Компонент | Описание | Производитель | PDF | Buy |
CM200TU-12F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM200TU-12F | Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM200TU-12F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM200TU-12F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
CM200TU-12H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM200TU-12H | Six IGBTMOD 200 Amperes/600 Volts | Powerex Power Semiconductors | | |
CM200TU-12H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
CM200TU-12H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
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