| Компонент | Описание | Производитель | PDF | Buy |
| CM600HU-12F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor |  |  |
| CM600HU-12F | Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts | Powerex Power Semiconductors | | |
| CM600HU-12F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM600HU-12F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM600HU-12H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM600HU-12H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM600HU-12H | Single IGBTMOD 600 Amperes/600 Volts | Powerex Power Semiconductors | | |
| CM600HU-12H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM600HU-24F | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM600HU-24F | Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts | Powerex Power Semiconductors | | |
| CM600HU-24F | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM600HU-24F_09 | IGBT MODULES HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| CM600HU-24H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM600HU-24H | Single IGBTMOD 600 Amperes/1200 Volts | Powerex Power Semiconductors | | |
| CM600HU-24H | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
| CM600HU-24H_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | | |
