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| Результаты поиска для D8D6 | |
| Компонент | Описание | Производитель | PDF | Buy |
| KM416RD8D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor |  |  |
| KM418RD8D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| W4NXD8D-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| 57RE-40140-730BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40140-830BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40240-730BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40240-830BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40360-730BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40360-830BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40500-730BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| 57RE-40500-830BD8D-FA | Right Angle Solder Termination Connectors | DDK Ltd. | | |
| W4NXD8D-S000 | Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
| LESD8D12T5G | ESD PROTECTION DIODE Cellular phones audio Digital cameras | Leshan Radio Company | | |
| E15D8D2F-155.520M | OSCILLATOR | Ecliptek Corporation | | |
| E13D8D2F-155.520M | OSCILLATOR | Ecliptek Corporation | | |
| E15D8D2F-155.520MTR | OSCILLATOR | Ecliptek Corporation | | |
| E13D8D2F-155.520MTR | OSCILLATOR | Ecliptek Corporation | | |
| E15D8D2F-155520M | OSCILLATOR | Ecliptek Corporation | | |
| E13D8D2F-155520M | OSCILLATOR | Ecliptek Corporation | | |
| E15D8D2F-155520MTR | OSCILLATOR | Ecliptek Corporation | | |
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