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| DCB010 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
DCB010 | Very High-Speed Switching Diode | Sanyo Semicon Device | | |
| *DCB0*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
K9F2808Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F2808Q0B-DCB0 | 16M x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F2808U0B-DCB0 | 16M x 8 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F2808U0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F2816U0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F2816Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F5608Q0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor | | |
K9F5608U0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor | | |
K9F5608Q0B-DCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F5616Q0B-DCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F5616Q0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor | | |
K9F5616U0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata | Samsung semiconductor | | |
K9F5608U0B-DCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F5616U0B-DCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | Samsung semiconductor | | |
K9F1208Q0A-DCB0 | 64M x 8 bit NAND flash memory, 1.70 - 1.95V | Samsung semiconductor | | |
K9F1208U0A-DCB0 | 64M x 8 bit NAND flash memory, 2.7 - 3.6V | Samsung semiconductor | | |
K9F1216U0A-DCB0 | 32M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung semiconductor | | |
K9F1216Q0A-DCB0 | 32M x 16 bit NAND flash memory, 1.70 - 1.95V | Samsung semiconductor | | |
AT45DCB002 | 8-megabyte 4-megabyte, and 2-megabyte 2.7-volt Only DataFlash Cards | ATMEL Corporation | | |
AT45DCB002 | 8-megabyte, 4-megabyte, and 2-megabyte 2.7-volt Only DataFlash Cards | ATMEL Corporation | | |
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