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Компонент | Описание | Производитель | PDF | Buy |
K6T0808C1D-DL70 | 32Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
K6T1008C2C-DL70 | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
K6T1008C2E-DL70 | 128Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
K6T4008C1B-DL70 | 512Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
K6T4008C1C-DL70 | 512Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | | |
NDL7001 | 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER | NEC | | |
NDL7001 | 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER | NEC | | |
HSDL7001 | IR 3/16 Encode/Decode IC | Agilent(Hewlett-Packard) | | |
NDL7001L | 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER | NEC | | |
NDL7001L | 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER | NEC | | |
MMDL707 | Schottky Barrier Diode | Shenzhen Luguang Electronic Technology Co., Ltd | | |
M29W641DL70N1E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
M29W641DL70N1F | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
M29W641DL70N1T | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
M29W641DL70N6E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
M29W641DL70N6F | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
M29W641DL70N6T | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
M68AW256DL70ND1T | 4 Mbit (256K x16) 3.0V Asynchronous SRAM | STMicroelectronics | | |
M68AW256DL70ND6T | 4 Mbit (256K x16) 3.0V Asynchronous SRAM | STMicroelectronics | | |
M29W641DL70ZA1E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | STMicroelectronics | | |
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