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Компонент | Описание | Производитель | PDF | Buy |
15FY7 | COMPACTRON DISSIMILAR-DOUBLE-TRIODE PENTODE | General Electric Company | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FCA-210-FY7 | 10 AMPERES, DPDT | Tyco Electronics | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BFY74 | Small Signal Transistors | Central Semiconductor Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BFY74 | Bipolar NPN Device in a Hermetically sealed TO18 | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BFY75 | Bipolar NPN Device | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SF_BFY75 | Bipolar NPN Device | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BFY76 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BFY76 | Small Signal Transistors | Central Semiconductor Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SF_BFY76 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
BFY77 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CFY77 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) | Siemens Semiconductor Group | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
SF_BFY77 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package | Seme LAB | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CFY77-08 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) | Siemens Semiconductor Group | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
CFY77-10 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) | Siemens Semiconductor Group | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FY7AAJ-03A | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FY7AAJ-03A | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FY7ACH-03A | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FY7ACH-03A | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FY7ACH-03A | MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
FY7BCH-02 | MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Renesas Technology Corp | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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