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Компонент | Описание | Производитель | PDF | Buy |
FCA-210-FY8 | 10 AMPERES, DPDT | Tyco Electronics | | |
FY80 | VEB WERK FUR FERNMELDEWESEN | List of Unclassifed Manufacturers | | |
BFY81 | Dual, High-Gain, Low-noise, low-current type | List of Unclassifed Manufacturers | | |
BFY81 | SILICON DUAL MATCHED NPN TRANSISTORS | Seme LAB | | |
BFY81DCSM | Dual Bipolar NPN Devices. | Seme LAB | | |
BFY82DCSM | Dual Bipolar NPN Devices in a hermetically sealed | Seme LAB | | |
BFY84 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | Seme LAB | | |
BFY84DCSM | Dual Bipolar NPN Devices in a hermetically sealed | Seme LAB | | |
WGCE5038SL9FY882071 | DVB-S2 Advanced Modulation Satellite Tuner | Intel Corporation | | |
WGCE5038SL9FY882071 | DVB-S2 Advanced Modulation Satellite Tuner | Intel Corporation | | |
FY8AAJ-03A | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | | |
FY8AAJ-03A | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors | | |
FY8AAJ-03F | High-Speed Switching Use Nch Power MOS FET | Renesas Technology Corp | | |
FY8AAJ-03F-T13 | High-Speed Switching Use Nch Power MOS FET | Renesas Technology Corp | | |
FY8ABJ-03 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | | |
FY8ABJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors | | |
FY8ABJ-03 | MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE | Renesas Technology Corp | | |
FY8ABJ-03A | 8A power mosfet for high-speed switching use | Mitsubishi Electric Semiconductor | | |
FY8ACH-02A | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | | |
FY8ACH-02A | MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Renesas Technology Corp | | |
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