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Компонент | Описание | Производитель | PDF | Buy |
UXA02040G4BC100 | High Precision Leaded Resistors | Vishay Siliconix | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
UXB02070G4BC100 | High Precision Leaded Resistors | Vishay Siliconix | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
UXE04140G4BC100 | High Precision Leaded Resistors | Vishay Siliconix | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10K | Short Circuit Rated UltraFast IGBT | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD-LPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10SPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC10UDPBF | INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC15MD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A) | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
IRG4BC15MDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | International Rectifier | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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