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| GT50J325 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
GT50J325 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor |  |  |
| *GT50J*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| GT50J102 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT50J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT50J121 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT50J121_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT50J122 | Current Resonance Inverter Switching Application | Toshiba Semiconductor | | |
| GT50J301 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT50J322 | N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) | Toshiba Semiconductor | | |
| GT50J322 | SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | Toshiba Semiconductor | | |
| GT50J322_06 | SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | Toshiba Semiconductor | | |
| GT50J325 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT50J325 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT50J325_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT50J327 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application | Toshiba Semiconductor | | |
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