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| Результаты поиска для GT60M | |
| Компонент | Описание | Производитель | PDF | Buy |
| GT60M104 | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor |  |  |
| GT60M301 | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) | Toshiba Semiconductor | | |
| GT60M302 | N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) | Toshiba Semiconductor | | |
| GT60M303 | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Toshiba Semiconductor | | |
| GT60M322 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT60M323 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | | |
| GT60M323 | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | Toshiba Semiconductor | | |
| GT60M323_06 | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | Toshiba Semiconductor | | |
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