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| IRFF120 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET | Intersil Corporation |  |  |
| *IRFF1*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRFF110 | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFF110 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF110 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | | |
| IRFF111 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF112 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF113 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | | |
| IRFF120 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF121 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF122 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF123 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF130 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
| IRFF130 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | | |
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFF131 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
| IRFF132 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
| IRFF133 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
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