| Компонент | Описание | Производитель | PDF | Buy |
| IRFF024 | 60V, N-CHANNEL | International Rectifier |  |  |
| IRFF024 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | | |
| IRFF034 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | Seme LAB | | |
| IRFF110 | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFF110 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF110 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | | |
| IRFF111 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF112 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF113 | Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | | |
| IRFF120 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF121 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF122 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF123 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | | |
| IRFF130 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
| IRFF130 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | | |
| IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil Corporation | | |
| IRFF131 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
| IRFF132 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | | |
