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| IRFS640 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRFS640 | Improved inductive ruggedness | Samsung semiconductor |  |  |
| *IRFS6*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| IRFS610A | Advenced Power MOSFET (N-CHANNEL) | Fairchild Semiconductor | | |
| IRFS610B | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS614B | 250V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS620B | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS624B | 250V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS630A | Advanced Power MOSFET | Fairchild Semiconductor | | |
| IRFS630B | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS634A | Advanced Power MOSEFT | Samsung semiconductor | | |
| IRFS634B | 250V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS640 | Improved inductive ruggedness | Samsung semiconductor | | |
| IRFS640 | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS640A | Rugged Gate Oxide Technology | Fairchild Semiconductor | | |
| IRFS640A | Improved gate charge | Samsung semiconductor | | |
| IRFS640B | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS640B | 200V N-Channel MOSFET | Tiger Electronic Co.,Ltd | | |
| IRFS641 | Improved inductive ruggedness | Samsung semiconductor | | |
| IRFS644A | Advanced Power MOSFET | Fairchild Semiconductor | | |
| IRFS644B | 250V N-Channel MOSFET | Fairchild Semiconductor | | |
| IRFS650A | Advanced Power MOSFET | Fairchild Semiconductor | | |
| IRFS650B | 200V N-Channel MOSFET | Fairchild Semiconductor | | |
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