| Компонент | Описание | Производитель | PDF | Buy |
| EPA249J-70 | 8 Pin Triple TTL Compatible Active Delay Lines | PCA ELECTRONICS INC. |  |  |
| X28HC64J-70 | 5 Volt, Byte Alterable EEPROM | Intersil Corporation | | |
| X28HC64J-70 | 5 Volt, Byte Alterable EEPROM | Intersil Corporation | | |
| HMN1288J-70 | Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V | List of Unclassifed Manufacturers | | |
| X28HC64J-70 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| NN514256J-70 | CMOS 256K x 4bit Dynamic RAM | List of Unclassifed Manufacturers | | |
| X28HC256J-70 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| X28VC256J-70 | 5 Volt, Byte Alterable E2PROM | Xicor Inc. | | |
| LC322260J-70 | 2 MEG (131072 words x 16 bits) DRAM fast page mode, byte reed/write | Sanyo Semicon Device | | |
| LC322271J-70 | 2MEG (131072words x 16bit) DRAM fast page mode, byte write | Sanyo Semicon Device | | |
| HY62256AJ-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | List of Unclassifed Manufacturers | | |
| EM565161BJ-70 | 512K x 16 Low Power SRAM | Etron Technology, Inc. | | |
| NN514256LJ-70 | CMOS 256K x 4bit Dynamic RAM | List of Unclassifed Manufacturers | | |
| TC514402AJ-70 | 1,048,576 WORD x 4 BIT DYNAMIC RAM | Toshiba Semiconductor | | |
| NN514256AJ-70 | CMOS 256K x 4bit Dynamic RAM | List of Unclassifed Manufacturers | | |
| IGP-28111J-70 | SFP Optical Transceivers for 2.7Gb/s 180km DWDM Applications | Bookham, Inc. | | |
| LC321664BJ-70 | 1 MEG (65536 words x 16 bit) DRAM, fast page mode, byte write | Sanyo Semicon Device | | |
| LC321667BJ-70 | 1 MEG (65536 words x 16 bit) DRAM, EDO page mode, byte write | Sanyo Semicon Device | | |
| HY62256ALJ-70 | 32Kx8bit CMOS SRAM, standby current=100uA, 70ns | List of Unclassifed Manufacturers | | |
| TMS44400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 5.0V | Texas Instruments | | |
