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| K4E160411D-B DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor |  |  |
| *K4E160*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| K4E160411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E160811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160812D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E160812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
| K4E160812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | | |
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