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| K4R271669AM-CG6 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor |  |  |
| *K4R271669*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| K4R271669A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | | |
| K4R271669AM-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | | |
| K4R271669AM-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | | |
| K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung semiconductor | | |
| K4R271669AN-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | | |
| K4R271669AN-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | | |
| K4R271669B | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-MCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-NCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | | |
| K4R271669D | 128Mbit RDRAM(D-die) | Samsung semiconductor | | |
| K4R271669D-T | 128Mbit RDRAM(D-die) | Samsung semiconductor | | |
| K4R271669D-TCS8 | 128Mbit RDRAM(D-die) | Samsung semiconductor | | |
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