| Компонент | Описание | Производитель | PDF | Buy |
| K7K1618T2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor |  |  |
| K7K1618U2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7K1636T2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7K1636U2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7K3218T2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7K3218U2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7K3236T2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| K7K3236U2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | | |
| RS111/2W2K7KB | THE FIXED CARBON COMPOSITION RESISTORS | Sharma Electro Components,Inc | | |
| FK7KM-12 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | | |
| FK7KM-12 | High-Speed Switching Use Nch Power MOS FET | Renesas Technology Corp | | |
| RS111/2W2K7KT | THE FIXED CARBON COMPOSITION RESISTORS | Sharma Electro Components,Inc | | |
